1.Job Function

This position will be responsible for Silicon technology research at a Qualcomm Silicon Technology Research Center in China.  The candidate must possess expert knowledge and skills in advanced nanodevice process technology and device physics, and knowledge of CMOS circuit building blocks. Successful candidates will focus on emerging nanodevice research including alternative device architecture and carrier transport/switching mechanism.  Successful candidate will also work closely with Qualcomm internal strategic technology development team and external research partners to establish Qualcomm’s Si technology roadmap.

Responsibilities:
· Sync up with Qualcomm internal strategic technology development team to set up Si technology research objective, scope and direction.

· Assess various device architecture candidates and carrier transport/switching mechanisms to down-select nanodevice for the future generations of communication and server products.

· Collaborate with external research partners to experimentally validate functional nanodevice including logic, SRAM, IO/Analog, and ring oscillators.

· Transfer critical Si technology research outcome to Qualcomm internal Si technology development team for future generations Si technology pathfinding.

Basic Qualifications:

Minimum 3 years of experience in advanced nanodevice device fabrication and characterization.
Solid device physics knowledge is a must.
Familiar with various test structures of nanodevice process development.

Strong data analysis skill is required.
Strong communication skills and partner relationship skills.

Required: New/recent PhD graduate in Electrical Engineering, Physics, or Materials Science
* Li-APAC

2.Job Title: Process Technology Development Engineer

Location: Shanghai  

Job Function

This position will be responsible for collaborating closely with our key foundry partner to develop advanced FinFET technologies toward Qualcomm products qualification. The candidate must possess expert knowledge and skills in advanced CMOS process integration, device physics, and knowledge of CMOS circuit building blocks. Successful candidates will focus on FinFET specific device engineering including Fin, Source/Drain, & HKMG formations for FEOL, and Self-aligned Contact integration & advanced Cu metallization for BEOL.  Successful candidates will also work closely with internal logic, memory, and analog/RF design teams to understand the product requirements, and ensure the correct technology implementation.

Responsibilities: 

• Work with Qualcomm internal teams and foundry partner to define design rules, device target, process flow, and key technology enablers during technology definition phase.

• Construct FEOL and BEOL integration flows and build FinFET enabling capabilities with foundry partner.

• Demonstrate functional FinFET devices including, logic, SRAM, IO/Analog, and ring oscillators with internal and external teams.

• Meet performance, leakage, and variation targets to demonstrate logic and SRAM yield.

• Work closely with Qualcomm design, PTE and reliability teams to understand product needs and resolve issues during various phases of product bring-up.

• Coordinate internal resources for process/device development with foundry suppliers, IP verification, and NTO product performance optimization.

Basic Qualifications:

Minimum 3 years of experience in advanced CMOS device fabrication and characterization.

Solid CMOS device physics knowledge. HKMG/FinFET experience is a plus.

Familiar with various test structures of CMOS process development.

Strong data analysis skill is required.

Strong communication skills and partner relationship skills.

Required: New/recent PhD graduate in Electrical Engineering, Physics, or Materials Science